METHOD OF INJECTING DOPANT GAS
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United States of America Patent
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Issued Date -
Jun 11, 2009
app pub date -
Sep 27, 2007
filing date -
Sep 29, 2006
priority date (Note) -
Abandoned
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Abstract
According to an dopant-injection method for injecting volatilized dopant gas into semiconductor melt in a crucible (31), the crucible (31) is rotated alternately clockwise and counterclockwise around a support shaft (36) extending in a flowing direction of the dopant gas, so that the dopant gas is blown against the semiconductor melt white the crucible is rotated. Rotating the crucible (31) causes convection currents in the semiconductor melt therein, thereby facilitating diffusion of the blown dopant in the semiconductor melt.
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