Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods
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United States of America Patent
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Jan 12, 2010
Grant Date -
Jun 11, 2009
app pub date -
Dec 7, 2007
filing date -
Dec 7, 2007
priority date (Note) -
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Abstract
A memory device as described herein includes a memory member contacting first and second interface structures. The first interface structure electrically and thermally couples the memory member to access circuitry and has a first thermal impedance therebetween. The second interface structure electrically and thermally couples the memory member to a bit line structure and has a second thermal impedance therebetween. The first and second thermal impedances are essentially equal such that applying a reset pulse results in a phase transition of an active region of the memory member spaced away from both the first and second interface structures.
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