Method of making a semiconductor device with residual amine group free multilayer interconnection

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Oct 23, 2008
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Jun 7, 2002

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Abstract

gas with the H group contained in the second SiOC film and the generation of an amine group such as NH in the second SiOC film can be prevented. Thus, the dissolution hindering phenomenon in the chemically amplified resist film can be avoided.

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Patent Owner(s)

Patent Owner	Address
FUJITSU MICROELECTRONICS LIMITED	7-1 NISHI-SHINJUKU 2-CHOME SHINJUKU-KU TOKYO 163-0722

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Ikeda, Masanobu	Kawasaki , JP	142	508
Kakamu, Katsumi	Kasugai , JP	21	110
Watatani, Hirofumi	Kawasaki , JP	41	458

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Method of making a semiconductor device with residual amine group free multilayer interconnection

Number of patents in Portfolio can not be more than 2000

United States of America Patent

12289227

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12289227

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