Apparatus and Method for Modeling MOS Transistor
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United States of America Patent
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Issued Date -
Jun 25, 2009
app pub date -
Nov 6, 2008
filing date -
Dec 24, 2007
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Abstract
Disclosed are an apparatus and a method for modeling a MOSFET (Metal-Oxide Semiconductor Field Effect Transistor). The method can include the steps of: establishing an equation and a variable that determine the driving current characteristics of the MOS transistor; generating a random number; converting the random number such that the random number has a value satisfying vertex points in an equation of a rotated lozenge and determining a variation degree of the variable based on the value of the random number; and outputting driving current distribution of the MOS transistor by using the equation and the variation degree of the variable.
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