Non-volatile programmable variable resistance element

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United States of America Patent

APP PUB NO 20090166601A1
SERIAL NO

12006390

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Abstract

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A phase-change memory element exhibits a non-uniform temperature profile in the phase-change material, resulting in a non-uniform temperature profile. The non-uniform temperature profile causes non-uniform growth of a programmed volume, resulting in a gradual R-I characteristic. The phase-change material may be a chalcogenide material.

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Patent Owner(s)

Patent OwnerAddress
OVONYX INC2956 WATERVIEW DRIVE ROCHESTER HILLS MI 48309

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Czubatyj, Wolodymyr Warren , US 67 5770
Wicker, Guy Southfield , US 24 789

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