Probabilistic error correction in multi-bit-per-cell flash memory

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United States of America Patent

PATENT NO 9094047
APP PUB NO 20090183049A1
SERIAL NO

12401760

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Data that are stored in cells of a multi-bit-per cell memory, according to a systematic or non-systematic ECC, are read and corrected (systematic ECC) or recovered (non-systematic ECC) in accordance with estimated probabilities that one or more of the read bits are erroneous. In one method of the present invention, the estimates are a priori. In another method of the present invention, the estimates are based only on aspects of the read bits that include significances or bit pages of the read bits. In a third method of the present invention, the estimates are based only on values of the read bits. Not all the estimates are equal.

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Patent Owner(s)

  • RAMOT AT TEL-AVIV UNIVERSITY LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Alrod, Idan Herzliya, IL 242 7163
Lasser, Menahem Kohav Yair, IL 185 8032
Litsyn, Simon Giv'at Shmuel, IL 72 3225
Murin, Mark Kfar Saba, IL 46 2332
Sharon, Eran Rishon Lezion, IL 322 8337

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