Method of making a phase change memory cell having a silicide heater in conjunction with a FinFET
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United States of America Patent
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Oct 22, 2013
Grant Date -
Jul 23, 2009
app pub date -
Jan 18, 2008
filing date -
Jan 18, 2008
priority date (Note) -
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Abstract
A phase change memory (PCM) cell includes a transistor, a PCM structure, and a heater. The transistor has a first current electrode and a second current electrode in a structure, and a channel region having a first portion along a first sidewall of the structure and having a second portion along a second sidewall of the structure. The second sidewall is opposite the first sidewall. The transistor has a control electrode that has a first portion adjacent to the first sidewall and a second portion adjacent to the second sidewall. The PCM structure exhibits first and second resistive values when in first and second phase states, respectively. The heater is on the structure and produces heat when current flows through the heater for changing the phase state of the phase change structure.
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