Crystal-growing furnace with heating improvement structure

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20090188426A1
SERIAL NO

12222078

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A crystal-growing furnace with a heating improvement structure includes a furnace body, a supporting table, a top heater, and a bottom heater. When the silicon material around the top heater is melted, molten silicon slurry will flow directly into the spacing among particles of the silicon material. This will expedite internal part of the silicon material to absorb energy. As a result, a desirable cycle will be established to expedite melting the whole silicon material in the crucible. The crucible is heated at the bottom thereof by the bottom heater directly so as to enhance efficiency in melting the silicon material in the crucible, and to save energy and time consumed by the crystal-growing furnace. Further, since both of the top and the bottom heaters are symmetrical with one another, the crucible can be heated uniformly. This not only saves energy and makes the heating job convenient, but also saves cost in manufacture.

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Patent Owner(s)

Patent OwnerAddress
GREEN ENERGY TECHNOLOGY INCNO 22 SEC 3 JHONGSHAN N RD JHONGSHAN DISTRICT TAIPEI CITY 104

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lew, Shiow-Jeng Taipei , TW 9 25
Lin, Hur-Lon Taipei , TW 7 18

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