Zinc Oxide Materials and Methods for Their Preparation
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United States of America Patent
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Issued Date -
Aug 13, 2009
app pub date -
Apr 5, 2007
filing date -
Apr 7, 2006
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Abandoned
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Abstract
A method for preparing p-type zinc oxide (ZnO) is described. The p-type ZnO is prepared by implanting low energy acceptor ions into an n-type ZnO substrate and annealing. In an alternative embodiment, the n-type ZnO substrate is pre-doped by implanting low energy donor ions. The p-type ZnO may have application in various optoelectronic devices, and a p-n junction formed from the p-type ZnO prepared as described above and a bulk n-type ZnO substrate is also described.
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