Lateral Trench MOSFET with Conformal Depletion-Assist Layer
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United States of America Patent
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Issued Date -
Aug 20, 2009
app pub date -
Feb 15, 2008
filing date -
Feb 15, 2008
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A lateral trench DMOS device formed in a substrate of a first conductivity type includes a vertical trench lined with a dielectric layer and containing a gate electrode. A source region of a second conductivity is adjacent the surface of the substrate and a sidewall of the trench. A drain region of the second conductivity type is adjacent the surface of the substrate and spaced apart from the source region. A field oxide region is disposed at the surface of the substrate between the source region and the drain region and a drift region of the second conductivity type extends laterally from the trench sidewall to the drain region. A body region of a first conductivity type is disposed between the source region and the drift region, the body region adjacent the trench sidewall where the body region has a profile that is conformal to the field oxide region.
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