Lateral Trench MOSFET with Bi-Directional Voltage Blocking
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United States of America Patent
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Issued Date -
Aug 20, 2009
app pub date -
Feb 15, 2008
filing date -
Feb 15, 2008
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A lateral trench DMOS device formed in a substrate of a first conductivity type includes a trench extending downward from a surface of the substrate, the trench lined with a dielectric layer and containing a gate electrode. The device includes a source region of a second conductivity type adjacent the surface of the substrate and a sidewall of the trench, a drain region of the second conductivity type adjacent the surface of the substrate and spaced apart from the source region, a body region of the first conductivity type adjacent the source region and the sidewall of the trench, a drift region of the second conductivity type adjacent the body region, the sidewall of the trench and the drain region; and a body contact region of the first conductivity type disposed in the body region and spaced apart from the source region.
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