METHOD AND SYSTEM FOR XENON FLUORIDE ETCHING WITH ENHANCED EFFICIENCY

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United States of America Patent

SERIAL NO

12467942

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Abstract

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Provided herein is an apparatus and a method useful for manufacturing MEMS devices. An aspect of the disclosed apparatus provides a substrate comprising an etchable material exposed to a solid-state etchant, wherein the substrate and the solid-state etchant are disposed in an etching chamber. In some embodiments, the solid state etchant is moved into close proximity to the substrate. In other embodiments, a configurable partition is between the substrate and the solid-state etchant is opened. The solid-state etchant forms a gas-phase etchant suitable for etching the etchable material. In some preferred embodiments, the solid-state etchant is solid xenon difluoride. The apparatus and method are advantageously used in performing a release etch in the fabrication of optical modulators.

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Patent Owner(s)

Patent OwnerAddress
SNAPTRACK INC5775 MOREHOUSE DRIVE SAN DIEGO CA 92121

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cummings, William J Millbrae , US 130 4809
Floyd, Philip D Redwood City , US 75 3089

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