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Abstract

A pixel based on a pinned-photodiode structure that creates a lateral electric drift field. The combination of the photodiode with adjacent CCD gates enables the utilization of the drift field device in applications such as 3-D imaging. Compared with recently used demodulation devices in CCD or CMOS technology, the new pinned-photodiode based drift field pixel has its advantages in its wide independence of the quantum efficiency on the optical wavelength, its high optical sensitivity, the opportunity of easily creating arbitrary potential distributions in the semiconductor, the straight-forward routing capabilities and the generation of perfectly linear potential distributions in the semiconductor.

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First Claim