Method for angular doping of source and drain regions for odd and even NAND blocks
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United States of America Patent
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Sep 7, 2010
Grant Date -
Sep 17, 2009
app pub date -
Apr 7, 2009
filing date -
Sep 28, 2004
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Abstract
Source implantations are performed at a first implantation angle to areas between stacked gate structures of a NAND string. Drain implantations are performed at a second implantation angle to areas between the stacked gate structures. The drain implantations create lower doped regions of a first conductivity type in the substrate on drain sides of the stacked gate structures. The source implantations create higher doped regions of the first conductivity type in the substrate on source sides of the stacked gate structures.
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