Importance

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Abstract

An interconnect structure for a semiconductor device is made by forming a contact pad on a substrate, forming an under bump metallization layer over the contact pad, forming a photoresist layer over the substrate, removing a portion of the photoresist layer to form an opening which exposes the UBM, depositing a first conductive material into the opening of the photoresist, removing the photoresist layer, depositing a second conductive material over the first conductive material, and coating the second conductive material with an organic solderability preservative. The interconnect structure is formed without solder reflow. The first conductive layer is nickel and the second conductive layer is copper. The organic solderability preservative is made with benzotriazole, rosin, rosin esters, benzimidazole compounds, or imidazole compounds. The interconnect structure decreases the pitch between the core pillars in the interconnect array and increases the density of I/O contacts on the semiconductor device.

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First Claim