SOURCE AND BODY CONTACT STRUCTURE FOR TRENCH-DMOS DEVICES USING POLYSILICON
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United States of America Patent
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Issued Date -
Oct 1, 2009
app pub date -
Mar 31, 2008
filing date -
Mar 31, 2008
priority date (Note) -
Abandoned
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Abstract
A semiconductor device includes a gate electrode, a top source region disposed next to the gate electrode, a drain region disposed below the bottom of the gate electrode, a oxide disposed on top of the source region and the gate electrode, and a doped polysilicon spacer disposed along a sidewall of the source region and a sidewall of the oxide. Methods for manufacturing such device are also disclosed.
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