WAFER PROCESSING METHOD AND WAFER PROCESSING APPARATUS
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United States of America Patent
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Issued Date -
Oct 1, 2009
app pub date -
Dec 11, 2008
filing date -
Mar 26, 2008
priority date (Note) -
Abandoned
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Abstract
A wafer processing method is provided comprising the steps of: holding a wafer (20) having devices formed on its front surface (21) so that a back surface (22) of the wafer is exposed; grinding the back surface of the wafer to form a brittle fracture layer (Z) on the back surface; and polishing the back surface of the wafer entirely so that the brittle fracture layer remains partially. It is possible to improve the strength of the wafer and reduce its surface roughness while allowing utilization of a gettering effect. It is also preferable to remove only an outermost layer of the back surface of the wafer. Further, it is preferable that the wafer is polished by at least one of wet polishing, dry polishing, wet etching and dry etching.
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