GRINDING METHOD FOR GRINDING BACK-SURFACE OF SEMICONDUCTOR WAFER AND GRINDING APPARATUS FOR GRINDING BACK-SURFACE OF SEMICONDUCTOR WAFER USED IN SAME

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United States of America Patent

APP PUB NO 20090247050A1
SERIAL NO

12398087

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Abstract

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A grinding method for grinding a back surface of a semiconductor wafer that performs infeed grinding of a back surface of a wafer laminated body, the method, during the grinding of the back surface of the wafer laminated body, having: measuring respectively a thickness of an outer peripheral portion and an inner peripheral portion of the wafer laminated body; calculating a thickness difference between the thickness of the outer portion and the thickness the inner portion; and tilting an axis of a grinding wheel by a predetermined angle in an arbitrary direction so as to reduce the calculated thickness difference.

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Patent Owner(s)

Patent OwnerAddress
TOKYO SEIMITSU CO LTDHACHIOJI-SHI TOKYO 192-8515

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arisa, Shigeharu Tokyo , JP 5 120
Ozawa, Toshiyuki Tokyo , JP 39 644

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