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Abstract

To provide a MOSFET which is increased in substrate bias effect .gamma. without increasing parasitic capacitance and junction leak current, the MOSFET includes: a gate electrode (104) formed on a semiconductor substrate (101) and an insulating film (103); a sidewall insulating film (106) covering the side surface of the gate electrode (104); and source/drain regions surrounded by the sidewall insulating film (106) and a shallow trench isolation (102) in a self-alignment manner, in which an impurity concentration of a first conductivity type which is the same type as a well-forming impurity has a profile becoming, in a lower direction of the gate electrode (104), lower in a channel formation region, then higher and again lower, and a high-concentration first conductivity type impurity region (110) is provided, in which the impurity concentration of the first conductivity type is formed to be low in the source/drain regions and to be high below the gate electrode (104) sandwiched between the source/drain regions.

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First Claim