USE OF SILICON-RICH NITRIDE IN A FLASH MEMORY DEVICE
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United States of America Patent
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Issued Date -
Oct 22, 2009
app pub date -
Apr 17, 2008
filing date -
Apr 17, 2008
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Abandoned
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Abstract
A flash memory cell includes a charge storage element that includes at least a first layer and a second layer. One of the layers includes silicon-rich silicon nitride and the other layer includes silicon nitride. More specifically, the ratio of silicon-to-nitrogen in the first layer is greater than the ratio of silicon-to-nitrogen in the second layer.
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