Vapor Phase Methods for Forming Electrodes in Phase Change Memory Devices

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United States of America Patent

APP PUB NO 20090275198A1
SERIAL NO

12113586

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Abstract

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, where M is a metal, R designates a ligand as indicated above and n is an integer corresponding to the number of ligands bonded to the central metal atom. M may be Ti, Ta, W, Nb, Mo, Pt, Cr, Co, Ni, or other transition metal.

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Patent Owner(s)

Patent OwnerAddress
OVONYX INC2956 WATERVIEW DRIVE ROCHESTER HILLS MI 48309

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kamepalli, Smuruthi Rochester , US 11 220
Lowrey, Tyler Rochester Hills , US 149 5841

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