Ruthenium silicide diffusion barrier layers and methods of forming same

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United States of America Patent

PATENT NO 8461682
APP PUB NO 20090278232A1
SERIAL NO

12501955

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Abstract

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A method for use in the fabrication of integrated circuits includes providing a substrate assembly having a surface. A diffusion barrier layer is formed over at least a portion of the surface. The diffusion barrier layer is formed of RuSix, where x is in the range of about 0.01 to about 10. The barrier layer may be formed by depositing RuSix by chemical vapor deposition or the barrier layer may be formed by forming a layer of ruthenium relative to a silicon containing region and performing an anneal to form RuSix from the layer of ruthenium and the silicon containing region. Capacitor electrodes, interconnects or other structures may be formed with such a diffusion barrier layer.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Marsh, Eugene P Boise, US 225 5776
Vaartstra, Brian A Nampa, US 158 9769

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