Dielectric materials and methods for integrated circuit applications
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United States of America Patent
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Dec 1, 2008
filing date -
Jan 17, 2002
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Abstract
An integrated circuit device is provided having a substrate and areas of electrically insulating and electrically conductive material, where the electrically insulating material is a hybrid organic-inorganic material that requires no or minimal CMP and which can withstand subsequent processing steps at temperatures of 450° C. or more.
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