Method in the fabrication of a ferroelectric memory device
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United States of America Patent
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Issued Date -
Nov 19, 2009
app pub date -
Jun 8, 2006
filing date -
Jun 14, 2005
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Abstract
In a method in the fabrication of a ferroelectric memory device comprising a memory layer sandwiched between first and second electrode sets, the memory layer as well as both electrode sets are each realized in the memory device by a suitable printing process.
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