Photoelectric Conversion Device And Method For Manufacturing The Same

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United States of America Patent

APP PUB NO 20090293954A1
SERIAL NO

12437954

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Abstract

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A photoelectric conversion device and a method for manufacturing the same are provided. The photoelectric conversion device includes a first semiconductor layer including a first impurity element over a substrate, a second semiconductor layer including an amorphous layer and a crystal over the first semiconductor layer, and a third semiconductor layer including a second impurity element over the second semiconductor layer. The crystal penetrates between the first semiconductor layer and the third semiconductor layer.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR ENERGY LABORATORY CO LTDATSUGI-SHI KANAGAWA 243-0036

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
YAMAZAKI, Shunpei Tokyo , JP 7297 227067

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