Non-volatile resistance switching memory
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United States of America Patent
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Apr 12, 2011
Grant Date -
Dec 17, 2009
app pub date -
Aug 13, 2009
filing date -
Apr 16, 2004
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Abstract
A microelectronic device or non-volatile resistance switching memory comprising the switching material for storing digital information. A process includes a step of depositing the switching material by a CMOS deposition technique at a temperature lower than 400° C.
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