VERTICAL TRANSISTOR WITH INTEGRATED ISOLATION
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United States of America Patent
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Issued Date -
Dec 17, 2009
app pub date -
Jun 12, 2008
filing date -
Jun 12, 2008
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A vertical transistor with integrated isolation is provided. The vertical transistor includes a vertical semiconductor structure and an isolation layer on a bottom surface of the vertical semiconductor structure. The vertical transistor further includes a plurality of terminals on a top surface of the vertical semiconductor structure.
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