High voltage tolerant pass-gate assembly for an integrated circuit

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United States of America Patent

APP PUB NO 20090309647A1
SERIAL NO

12214015

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Abstract

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A high-voltage tolerant pass-gate assembly (18) for controlling an electrical signal between a first pad (12) and a second pad (14) includes a pass-gate (24) and a first native device (26). In certain embodiments, the first native device (26) is positioned between the first pad (12) and the pass-gate (24). The first native device (26) is permanently enabled. In another embodiment, the pass-gate assembly (18) includes a second native device (28) positioned between the pass-gate (24) and the second pad (14). The second native device (28) can also be permanently enabled. Neither the first native device (26) nor the second native device (28) controls an on-off state of the pass-gate (24). The first native device (26) can have a first voltage and the pass-gate (24) can have a supply voltage that is substantially similar to the first voltage. The first native device (26) can reduce a voltage of the input signal (20) when the voltage of the input signal (20) is above a predetermined threshold voltage that is approximately equal to a supply voltage (30) of the pass-gate (24). The first native device (26) does not reduce the voltage of the input signal (20) when the input signal (20) is below the predetermined threshold voltage.

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Patent Owner(s)

Patent OwnerAddress
INTEGRATED DEVICE TECHNOLOGY INC6024 SILVER CREEK VALLEY ROAD SAN JOSE CA 95138

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lim, Shao-Jen Santa Clara , US 4 26
Wei, Sen-Jung San Jose , US 11 139

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