METHOD OF PHOTOLITHOGRAPHIC PATTERNING
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United States of America Patent
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Issued Date -
Dec 17, 2009
app pub date -
Jun 12, 2009
filing date -
Jun 13, 2008
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method of photolithographic patterning mainly includes: converting a first photolithographic pattern by a digital transformation in a first magnification to a second photolithographic pattern; producing a first optical reticle corresponding to the second photolithographic pattern by an initial lithography in a 1-to-1 image transfer; fabricating a second optical reticle on a transparent substrate by a first photolithography in a first demagnification corresponding to the first optical reticle; and fabricating a microscopic pattern of same dimension as the first photolithographic pattern on a wafer substrate by a second demagnification using the second optical reticle. The multiplication of the first magnification by the first demagnification by the second demagnification equals one. The present invention implements fine patterning on a wafer substrate so as to improve efficiency of photolithographic application.
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