Method for manufacturing a semiconductor wafer

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20090311862A1
SERIAL NO

12456355

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Abstract

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By removing residual mechanical stress generated during processing, wafers can be manufactured while suppressing deformation and cracking of the wafer even if the wafer is a large-diameter wafer. A method for manufacturing a wafer, includes: a slicing step (S10) for slicing an ingot to obtain a wafer; a double-sided simultaneous grinding step (S20) for roughly grinding the cut surfaces of each wafer; a chamfering step (S22) for chamfering the edge portion of the wafer; a double-sided simultaneous processing step for simultaneously processing both faces of the wafer so as to remove residual mechanical stress generated on the both faces thereof due to the slicing step and the double-sided grinding step; a single-sided finishing step for separately performing finishing processing on at least one face of the wafer; and a cleaning step for cleaning the wafer.

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Patent Owner(s)

Patent OwnerAddress
SUMCO TECHXIV CORPORATIONOMURA-SHI NAGASAKI 856-8555

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Maruoka, Daisuke Nagasaki , JP 6 5
Tajiri, Tomoaki Omura-shi , JP 4 16

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