ATOMIC LAYER DEPOSITION OF METAL CARBIDE FILMS USING ALUMINUM HYDROCARBON COMPOUNDS
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United States of America Patent
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Issued Date -
Dec 24, 2009
app pub date -
Apr 15, 2009
filing date -
Apr 16, 2008
priority date (Note) -
Abandoned
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Abstract
Methods of forming metal carbide films are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and an aluminum hydrocarbon compound, such as TMA, DMAH, or TEA. The aluminum hydrocarbon compound is selected to achieve the desired properties of the metal carbide film, such as aluminum concentration, resistivity, adhesion and oxidation resistance. In some embodiments, the methods are used to form a metal carbide layer that determines the work function of a control gate in a flash memory.
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