Method of manufacturing semiconductor device and substrate processing apparatus
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United States of America Patent
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Feb 7, 2012
Grant Date -
Dec 31, 2009
app pub date -
Jun 25, 2009
filing date -
Jun 25, 2008
priority date (Note) -
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Abstract
A manufacturing method of a semiconductor device of the present invention includes the step of forming an insulating film on a substrate, and the step of forming a high dielectric constant insulating film on the insulating film, and the step of forming a titanium aluminum nitride film on the high dielectric constant insulating film, wherein in the step of forming the titanium aluminum nitride film, formation of an aluminum nitride film and formation of a titanium nitride film are alternately repeated, and at that time, the aluminum nitride film is formed firstly and/or lastly.
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