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Abstract

An through-substrate via fabrication method requires forming a through-substrate via hole in a semiconductor substrate, depositing an electrically insulating, continuous and substantially conformal isolation material onto the substrate and interior walls of the via using ALD, and depositing a conductive material into the via and over the isolation material using ALD such that it is electrically continuous across the length of the via hole. The isolation material may be prepared by activating it with a seed layer deposited by ALD. The via hole is preferably formed by dry etching first and second cavities having respective diameters into the substrate's top and bottom surfaces, respectively, to form a single continuous aperture through the substrate. The present method may be practiced at temperatures of less than 200° C. The basic fabrication method may be extended to provide vias with multiple conductive layers, such as coaxial and triaxial vias.

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First Claim