High-stability thin-film capacitor and method for making the same
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United States of America Patent
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May 1, 2012
Grant Date -
Jan 7, 2010
app pub date -
Oct 16, 2007
filing date -
Oct 19, 2006
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Abstract
The dielectric of a capacitor is formed by superposition of at least two thin layers made from the same metal oxide, respectively in crystalline and amorphous form and respectively presenting quadratic voltage coefficients of capacitance of opposite signs. The respective thicknesses da and dc of the amorphous and crystalline thin layers comply with the following general formulas:
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