Probabilistic error correction in multi-bit-per-cell flash memory

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United States of America Patent

PATENT NO 8990658
APP PUB NO 20100005367A1
SERIAL NO

12401630

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Abstract

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Data that are stored in cells of a multi-bit-per cell memory, according to a systematic or non-systematic ECC, are read and corrected (systematic ECC) or recovered (non-systematic ECC) in accordance with estimated probabilities that one or more of the read bits are erroneous. In one method of the present invention, the estimates are a priori. In another method of the present invention, the estimates are based only on aspects of the read bits that include significances or bit pages of the read bits. In a third method of the present invention, the estimates are based only on values of the read bits. Not all the estimates are equal.

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Patent Owner(s)

  • RAMOT AT TEL-AVIV UNIVERSITY LTD.

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Alrod, Idan Herzliya, IL 242 7190
Lasser, Menahem Kohav Yair, IL 185 8041
Litsyn, Simon Giv'at Shmuel, IL 72 3229
Murin, Mark Kfar Saba, IL 46 2334
Sharon, Eran Rishon Lezion, IL 322 8362

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