CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAME

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United States of America Patent

APP PUB NO 20100006812A1
SERIAL NO

12499467

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Abstract

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Memory devices including a carbon-based resistivity-switchable material, and methods of forming such memory devices are provided, the methods including introducing a processing gas into a processing chamber, wherein the processing gas includes a hydrocarbon compound and a carrier gas, and generating a plasma of the processing gas to deposit a layer of the carbon-based switchable material on a substrate within the processing chamber. Numerous additional aspects are provided.

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Patent Owner(s)

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SANDISK TECHNOLOGIES LLC5080 SPECTRUM DRIVE SUITE 1050W ADDISON TX 75001

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Xiying San Jose, US 18 716
Ilkbahar, Alper San Jose, US 55 3088
Kumar, Tanmay Pleasanton, US 106 3382
Ping, Er-Xuan Fremont, US 221 2980
Scheuerlein, Roy E Cupertino, US 251 12028
Xu, Huiwen Sunnyvale, US 65 2561

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