CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAME
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United States of America Patent
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Issued Date -
Jan 21, 2010
app pub date -
Jul 17, 2009
filing date -
Jul 18, 2008
priority date (Note) -
Abandoned
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Abstract
Methods of forming memory devices, and memory devices formed in accordance with such methods, are provided, the methods including forming a via above a first conductive layer, forming a nonconformal carbon-based resistivity-switchable material layer in the via and coupled to the first conductive layer; and forming a second conductive layer in the via, above and coupled to the nonconformal carbon-based resistivity-switchable material layer. Numerous other aspects are provided.
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