Double gate manufactured with locos techniques
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United States of America Patent
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N/A
Issued Date -
N/A
app pub date -
Sep 18, 2009
filing date -
May 29, 2007
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
This invention discloses a method for manufacturing a trenched semiconductor power device that includes step of opening a trench in a semiconductor substrate. The method further includes a step of opening a top portion of the trench first then depositing a SiN on sidewalls of the top portion followed by etching a bottom surface of the top portion of the trench then silicon etching to open a bottom portion of the trench with a slightly smaller width than the top portion of the trench. The method further includes a step of growing a thick oxide layer along sidewalls of the bottom portion of the trench thus forming a bird-beak shaped layer at an interface point between the top portion and bottom portion of the trench.
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