Chemical Mechanical Polishing Composition for Copper Comprising Zeolite
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United States of America Patent
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Issued Date -
Jan 21, 2010
app pub date -
Dec 20, 2007
filing date -
Dec 22, 2006
priority date (Note) -
Abandoned
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Abstract
The present invention relates to a CMP slurry composition for polishing a copper film in a semiconductor device fabricating process. The CMP composition for polishing a substrate comprising copper comprises zeolite, an oxidizer and a complexing agent and a content of the complexing agent is 0.01˜0.8 weight % with respect to an entire weight of the polishing composition.
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