MUSHROOM TYPE MEMORY CELL HAVING SELF-ALIGNED BOTTOM ELECTRODE AND DIODE ACCESS DEVICE
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United States of America Patent
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Issued Date -
Jan 28, 2010
app pub date -
Jul 22, 2008
filing date -
Jul 22, 2008
priority date (Note) -
Abandoned
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Abstract
Memory devices are described along with methods for manufacturing. A memory device as described herein includes a plurality of word lines extending in a first direction, and a plurality of bit lines overlying the plurality of word lines and extending in a second direction. A plurality of memory cells are at cross-point locations. Each memory cell comprises a diode having first and second sides aligned with sides of a corresponding word line. Each memory cell also includes a bottom electrode self-centered on the diode, the bottom electrode having a top surface with a surface area less than that of the top surface of the diode. Each of the memory cells includes a strip of memory material on the top surface of the bottom electrode, the strip of memory material underlying and in electrical communication with a corresponding bit line.
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