SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

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United States of America Patent

SERIAL NO

12561841

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Abstract

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A semiconductor device includes a gate electrode over a semiconductor substrate, a channel region provided in the semiconductor substrate below the gate electrode, and a strain generation layer configured to apply stress to the channel region, the strain generation layer being configured to apply greater stress in absolute value to the source edge of the channel region than to the drain edge of the channel region.

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Patent Owner(s)

Patent OwnerAddress
FUJITSU SEMICONDUCTOR LIMITED2-10-23 SHIN-YOKOHAMA KOHOKU-KU YOKOHAMA-SHI KANAGAWA 222-0033

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ikeda, Keiji Yokohama-shi, JP 85 959
Miyashita, Toshihiko Tokyo, JP 21 660

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