Asymmetric Single Poly NMOS Non-Volatile Memory Cell
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United States of America Patent
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Oct 20, 2009
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Feb 25, 2008
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Abstract
away from the channel region, whereby the gate-to-drain capacitance is higher than the gate-to-source capacitance. The width of the floating gate extension portion is minimized, while both HV LDD and LV LDD implants are introduced together enabling LDD implant merging under the floating gate extension. HV LDD implant in the NVM transistor is replaced by LV LDD. The floating gate is formed using substantially U-shaped or J-shaped polysilicon structures. Various array addressing schemes are disclosed.
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