COPPER COMPOUND AND METHOD FOR PRODUCING COPPER THIN FILM USING THE SAME
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United States of America Patent
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app pub date -
Oct 13, 2009
filing date -
Jul 3, 2003
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Abandoned
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Abstract
The present invention provides a copper compound having a decomposition temperature in a range of 100° C. to 300° C. and including one unit or a plurality of connected units represented by the following Formula (1): (1)O, or solvent moleculesAccording to the above configuration, there are provided a copper compound capable of forming a copper thin film required for producing an electronic device or the like safely, inexpensively, and easily, and a method for producing a copper thin film using the copper compound.
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