Method of Manufacturing a Resistivity Changing Memory Cell, Resistivity Changing Memory Cell, Integrated Circuit, and Memory Module
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United States of America Patent
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Issued Date -
Feb 11, 2010
app pub date -
Aug 6, 2008
filing date -
Aug 6, 2008
priority date (Note) -
Abandoned
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Abstract
According to an embodiment, a method of manufacturing an integrated circuit including a plurality of resistivity changing memory cells is provided. The method includes: forming a stack of layers including a resistivity changing layer, a first conductive layer, a second conductive layer, and a patterned masking layer which are stacked above each other in this order; patterning the second conductive layer using the masking layer as a patterning mask; patterning the first conductive layer using the second conductive layer as a patterning mask; and patterning the resistivity changing layer using the first conductive layer as a patterning mask.
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