SEMICONDUCTOR DEVICE
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United States of America Patent
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app pub date -
Oct 16, 2009
filing date -
Jan 20, 2003
priority date (Note) -
Abandoned
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Abstract
A semiconductor device including: a semiconductor substrate; a first main electrode provided on a first main surface of said semiconductor substrate; a second main electrode provided on a second main surface of said semiconductor substrate, wherein a main current flows in a thickness direction of said semiconductor substrate; a trench that extends from the first main surface of said semiconductor substrate towards the second main surface; a gate insulating film covering an inner surface of said trench; and a gate electrode buried in said trench and surrounded by said gate insulating film.
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