Integrated circuit with a laterally diffused metal oxide semiconductor device and method of forming the same
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United States of America Patent
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Jul 3, 2012
Grant Date -
Feb 25, 2010
app pub date -
Aug 28, 2009
filing date -
Jan 29, 2004
priority date (Note) -
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Abstract
An integrated circuit with a transistor advantageously embodied in a laterally diffused metal oxide semiconductor device having a gate located over a channel region recessed into a semiconductor substrate and a method of forming the same. In one embodiment, the transistor includes a source/drain including a lightly or heavily doped region adjacent the channel region, and an oppositely doped well extending under the channel region and a portion of the lightly or heavily doped region of the source/drain. The transistor also includes a channel extension, within the oppositely doped well, under the channel region and extending under a portion of the lightly or heavily doped region of the source/drain.
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