Method of forming aluminum-doped metal carbonitride gate electrodes
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United States of America Patent
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Jul 26, 2011
Grant Date -
Feb 25, 2010
app pub date -
Aug 25, 2008
filing date -
Aug 25, 2008
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Abstract
A method for forming an aluminum-doped metal (tantalum or titanium) carbonitride gate electrode for a semiconductor device is described. The method includes providing a substrate containing a dielectric layer thereon, and forming the gate electrode on the dielectric layer in the absence of plasma. The gate electrode is formed by depositing a metal carbonitride film, and adsorbing an atomic layer of an aluminum precursor on the metal carbonitride film. The steps of depositing and adsorbing may be repeated a desired number of times until the aluminum-doped metal carbonitride gate electrode has a desired thickness.
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