High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells

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United States of America Patent

PATENT NO 8895842
SERIAL NO

12481175

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Abstract

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A method and apparatus for forming solar cells is provided. In one embodiment, a photovoltaic device includes a first TCO layer disposed on a substrate, a second TCO layer disposed on the first TCO layer, and a p-type silicon containing layer formed on the second TCO layer. In another embodiment, a method of forming a photovoltaic device includes forming a first TCO layer on a substrate, forming a second TCO layer on the first TCO layer, and forming a first p-i-n junction on the second TCO layer.

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Patent Owner(s)

  • APPLIED MATERIALS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Al-Bayati, Amir San Jose, US 75 7506
Chae, Yong Kee Pleasanton, US 20 429
Klein, Stefan Aschaffenburg, DE 28 172
Kumar, Bhaskar Santa Clara, US 34 371
Sheng, Shuran Santa Clara, US 48 682

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