Importance

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Abstract

A semiconductor-lid structure and method of forming a semiconductor-lid structure includes a semiconductor die, an ultrahigh thermal conductivity lid disposed on the semiconductor die, and a thermal interface layer between said semiconductor die and said ultrahigh thermal conductivity lid. The ultrahigh thermal conductivity lid includes a coupon having at least one uneven surface, a first layer on said at least one uneven surface formed from a process comprising one of sputter coating a highly adhesive metal over said uneven surface and sputtering a metallic seed layer, and a second layer on said first layer formed from a process comprising one of sputtering a metallic diffusion barrier layer over said first layer and electroplating the metallic seed layer with a highly conductive metal. The ultrahigh thermal conductivity lid has a smooth outer surface formed by chemical and/or mechanical processing of the ultrahigh thermal conductivity lid after formation of the second layer.

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First Claim