Methods of forming a photoresist-comprising pattern on a substrate

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United States of America Patent

PATENT NO 8409457
APP PUB NO 20100055913A1
SERIAL NO

12201744

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A method of forming a photoresist-comprising pattern on a substrate includes forming a patterned first photoresist having spaced first masking shields in at least one cross section over a substrate. The first masking shields are exposed to a fluorine-containing plasma effective to form a hydrogen and fluorine-containing organic polymer coating about outermost surfaces of the first masking shields. A second photoresist is deposited over and in direct physical touching contact with the hydrogen and fluorine-containing organic polymer coating. The second photoresist which is in direct physical touching contact with the hydrogen and fluorine-containing organic polymer coating is exposed to a pattern of actinic energy and thereafter spaced second masking shields are formed in the one cross section which comprise the second photoresist and correspond to the actinic energy pattern. The first and second masking shields together form at least a part of a photoresist-comprising pattern on the substrate. Other embodiments are disclosed.

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Patent Owner(s)

Patent OwnerAddress
U S BANK NATIONAL ASSOCIATION AS COLLATERAL AGENT633 WEST FIFTH STREET 24TH FLOOR LOS ANGELES CA 90071

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
deVilliers, Anton Boise, US 84 1044
Schrinsky, Alex Boise, US 12 62
Zhang, Zishu Boise, US 16 72
Zhu, Hongbin Boise, US 119 1016

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